Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them
Identifieur interne : 000C95 ( Russie/Analysis ); précédent : 000C94; suivant : 000C96Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them
Auteurs : RBID : Pascal:99-0262051Descripteurs français
- Pascal (Inist)
- 7350P, 7340N, 8105D, 6172V, 7820F, 7820C, 8560G, 8110B, 7855E, 7240, Etude expérimentale, Cadmium composé, Semiconducteur II-VI, Croissance semiconducteur, Indium, Interface métal semiconducteur, Dopage semiconducteur, Pléochroïsme, Indice réfraction, Polarisation optique, Photodétecteur, Croissance cristalline en phase vapeur, Photoluminescence, Photoconductivité.
English descriptors
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Abstract
The authors describe a gas-transport reaction method they recently developed using the compounds NH4Cl(Br,I) as transport agents. Using this method, they were able to grow semi-insulating cadmium telluride single crystals with carrier concentrations p=108-1010cm-3 at T=300K. These crystals were used to fabricate In-CdTe surface-barrier structures with peak voltaic photosensitivities of ∼105V/W. Their investigations of the emission properties of homogeneous crystals at T=77K and distinctive features of their photosensitivity spectra revealed that these material characteristics derive from the use of Cl, Br, and I as dopants. By illuminating their In-CdTe structures with linearly polarized light at oblique incidence, they generated induced photopleochroism, which was measured and used to determine the refraction index of the material, which is found to be n=2.8. The paper concludes with a discussion of how these structures can be used as photodetectors of natural and linearly polarized light. © 1999 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them</title><author><name sortKey="Ilchuk, G A" uniqKey="Ilchuk G">G. A. Ilchuk</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lvov State Polytechnical University, 290646 Lvov, Ukraine</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Lvov State Polytechnical University, 290646 Lvov</wicri:regionArea> <wicri:noRegion>290646 Lvov</wicri:noRegion> </affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>State Technical University, 195251 St.Petersburg, Russia</s1></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>State Technical University, 195251 St.Petersburg</wicri:regionArea><wicri:noRegion>195251 St.Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Ukrainets, N A" uniqKey="Ukrainets N">N. A. Ukrainets</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lvov State Polytechnical University, 290646 Lvov, Ukraine</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Lvov State Polytechnical University, 290646 Lvov</wicri:regionArea> <wicri:noRegion>290646 Lvov</wicri:noRegion> </affiliation></author><author><name sortKey="Ivanov Omskii, V I" uniqKey="Ivanov Omskii V">V. I. Ivanov Omskii</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg</wicri:regionArea><wicri:noRegion>194021 St.Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Rud, Yu V" uniqKey="Rud Y">Yu. V. Rud</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">Russie</country><wicri:regionArea>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg</wicri:regionArea><wicri:noRegion>194021 St.Petersburg</wicri:noRegion></affiliation></author><author><name sortKey="Rud, V Yu" uniqKey="Rud V">V. Yu. Rud</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Lvov State Polytechnical University, 290646 Lvov, Ukraine</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">Ukraine</country><wicri:regionArea>Lvov State Polytechnical University, 290646 Lvov</wicri:regionArea> <wicri:noRegion>290646 Lvov</wicri:noRegion> </affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0262051</idno><date when="1999-05">1999-05</date><idno type="stanalyst">PASCAL 99-0262051 AIP</idno><idno type="RBID">Pascal:99-0262051</idno><idno type="wicri:Area/Main/Corpus">015026</idno><idno type="wicri:Area/Main/Repository">014035</idno><idno type="wicri:Area/Russie/Extraction">000C95</idno></publicationStmt><seriesStmt><idno type="ISSN">1063-7826</idno><title level="j" type="abbreviated">Semiconductors</title><title level="j" type="main">Semiconductors</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cadmium compounds</term><term>Crystal growth from vapors</term><term>Experimental study</term><term>II-VI semiconductors</term><term>Indium</term><term>Optical polarization</term><term>Photoconductivity</term><term>Photodetectors</term><term>Photoluminescence</term><term>Pleochroism</term><term>Refractive index</term><term>Semiconductor doping</term><term>Semiconductor growth</term><term>Semiconductor-metal boundaries</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7350P</term><term>7340N</term><term>8105D</term><term>6172V</term><term>7820F</term><term>7820C</term><term>8560G</term><term>8110B</term><term>7855E</term><term>7240</term><term>Etude expérimentale</term><term>Cadmium composé</term><term>Semiconducteur II-VI</term><term>Croissance semiconducteur</term><term>Indium</term><term>Interface métal semiconducteur</term><term>Dopage semiconducteur</term><term>Pléochroïsme</term><term>Indice réfraction</term><term>Polarisation optique</term><term>Photodétecteur</term><term>Croissance cristalline en phase vapeur</term><term>Photoluminescence</term><term>Photoconductivité</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The authors describe a gas-transport reaction method they recently developed using the compounds NH<sub>4</sub>Cl(Br,I) as transport agents. Using this method, they were able to grow semi-insulating cadmium telluride single crystals with carrier concentrations p=10<sup>8</sup>-10<sup>10</sup>cm<sup>-3</sup> at T=300K. These crystals were used to fabricate In-CdTe surface-barrier structures with peak voltaic photosensitivities of ∼10<sup>5</sup>V/W. Their investigations of the emission properties of homogeneous crystals at T=77K and distinctive features of their photosensitivity spectra revealed that these material characteristics derive from the use of Cl, Br, and I as dopants. By illuminating their In-CdTe structures with linearly polarized light at oblique incidence, they generated induced photopleochroism, which was measured and used to determine the refraction index of the material, which is found to be n=2.8. The paper concludes with a discussion of how these structures can be used as photodetectors of natural and linearly polarized light. © 1999 American Institute of Physics.</div> </front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7826</s0></fA01><fA02 i1="01"><s0>SMICES</s0></fA02><fA03 i2="1"><s0>Semiconductors</s0></fA03><fA05><s2>33</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them</s1></fA08><fA11 i1="01" i2="1"><s1>ILCHUK (G. A.)</s1></fA11><fA11 i1="02" i2="1"><s1>UKRAINETS (N. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>IVANOV OMSKII (V. I.)</s1></fA11><fA11 i1="04" i2="1"><s1>RUD (Yu. V.)</s1></fA11><fA11 i1="05" i2="1"><s1>RUD (V. Yu.)</s1></fA11><fA14 i1="01"><s1>Lvov State Polytechnical University, 290646 Lvov, Ukraine</s1> <sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St.Petersburg, Russia</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>State Technical University, 195251 St.Petersburg, Russia</s1></fA14><fA20><s1>518-522</s1></fA20><fA21><s1>1999-05</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>12492</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0262051</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductors</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The authors describe a gas-transport reaction method they recently developed using the compounds NH<sub>4</sub>Cl(Br,I) as transport agents. Using this method, they were able to grow semi-insulating cadmium telluride single crystals with carrier concentrations p=10<sup>8</sup>-10<sup>10</sup>cm<sup>-3</sup> at T=300K. These crystals were used to fabricate In-CdTe surface-barrier structures with peak voltaic photosensitivities of ∼10<sup>5</sup>V/W. Their investigations of the emission properties of homogeneous crystals at T=77K and distinctive features of their photosensitivity spectra revealed that these material characteristics derive from the use of Cl, Br, and I as dopants. By illuminating their In-CdTe structures with linearly polarized light at oblique incidence, they generated induced photopleochroism, which was measured and used to determine the refraction index of the material, which is found to be n=2.8. 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